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    語言選擇: 中文版line英文版

    半導體微納米器件模擬軟件

    • nextnano++半導體納米器件模擬軟件
    nextnano++半導體納米器件模擬軟件

    nextnano++半導體納米器件模擬軟件

    • Version: nextnano++
    • 1D/2D/3D 納米器件
    • 圖形化軟件平臺
    • 豐富的材料庫和模擬樣例
    • 產品描述:nextnano++是專門用于量子器件的模擬軟件,可用于解薛定諤泊松電流,模擬量子阱,量子線,量子點等。
    • 在線訂購

    nextnano++ 可運行于可運行于視化軟件界面nextnanomat,nextnanomat 一款可對輸入文件(ASCII, XML...)圖形化,組織管理和提交模擬任務,對輸出文件圖形化的軟件平臺,可并行同時處理多任務(計算機多核要求滿足的情況下)。

    nextnanomat可以運行以下軟件:

    nextnano3

    nextnano++

    nextnano.MSB

    nextnano.QCL

    他也可以用于讀取各種TCAD或科研軟件,可以將二進制數據轉化成可以化的1D,2D和3D結果。這款軟件平臺的開發目的就是為了能夠更快的展示模擬結果。


    nextnano++軟件特點:

    - 包含 IV 族材料 (Si, Ge, SiGe) 和所有III-V族材料,以及他們三元或四元化合物材料,豐富的材料庫信息

    - 閃鋅礦和纖鋅礦結構的氮化物材料;

    - 可模擬任意幾何結構的器件 (1D, 2D and 3D)

    - 量子機理電子器件,基于 8-band k.p 模型

    - 可模擬應變,壓電和熱釋電效應

    - 生長方向沿 [001], [011], [111], [211]的材料,簡而言之,可模擬各種晶格取向

    - 平衡和非平衡體系, 計算近平衡電流(半經典l)

    - 可模擬磁場

    - 包含豐富的模擬樣例,用戶可輕松套用


    部分應用結果:


    應用教程樣例:

    1D SiGe

    1D doped Semiconductors

    1D Tight-binding bond structure

    1D Tight-binding graphene

    1D graphene (density)

    1D Poisson

    1D Triangular well

    1D Parabolic QW

    1D Double Quantum Well

    1D DOS in a QW

    1D LDOS

    1D Quantum Confined Stark Effect

    1D Exciton in QW

    1D Schottky barrier

    1D Schr?dinger-Poisson

    1D pn-junction

    1D Transmission (NEGF)

    1D QW (NEGF)

    1D RTD (NEGF)

    1D inverted HEMT

    1D voltage sweep

    1D piezo

    1D piezo [111]

    1D HEMT

    1D AlAs QW crossover I

    1D AlAs QW crossover II

    1D QW k.p dispersion

    1D deformation potentials

    1D AlGaInP on GaAs

    1D strain

    1D strained substrate

    1D wurtzite

    1D AlGaN/GaN FET

    1D bulk k.p dispersion in GaAs

    1D bulk k.p dispersion in GaN

    1D bulk k.p dispersion in II-VI

    1D GaN/AlGaN QW dispersion

    1D p-Si/SiO2/poly-Si/Gate

    1D C-V curve of a MIS

    1D Si/SiGe MODQW

    1D strained silicon

    1D Si inversion layer

    1D strained Si MOS

    1D Interband Transitions

    1D QW optical absorption

    1D QCL (simple)

    1D Quantum Cascade Laser

    1D Intraband Transitions

    1D InGaAs MQWs

    1D Scattering time

    1D SL minibands

    1D InAs/InGaSb SL (type-II)

    1D InAs/GaSb BGQW (type-II)

    1D full-band density bulk

    1D full-band density SL

    1D single-band vs. k.p

    2D single-band vs. k.p

    1D resistance in Si

    1D nin Si resistor

    1D Mobility in 2DEGs

    1D Tandem solar cell

    BIO-1D Gouy-Chapman

    BIO-1D PMF

    BIO-1D GaN/AlGaN electrolyte

    BIO-1D Si/SiO2 electrolyte

    BIO-1D Protein sensor

    2D Quantum corral

    2D Core-Shell nanowire

    2D GaN nanowire

    2D n / nin Si

    2D DG MOSFET

    2D DG MOSFET (QM)

    2D TG MOSFET

    2D QWR magnetic

    2D T-shaped QWR

    2D T-shaped strained QWR

    2D Exciton in QWR

    2D Landau levels

    2D Fock-Darwin states

    2D Fock-Darwin (ellipse)

    2D coupled QWRs in magnetic field

    2D The CBR method (Transmission)

    3D cubic QD

    3D artificial atom

    3D artificial QD crystal

    3D IB solar cell

    3D pyramidal QD

    3D hexagonal GaN QD (wurtzite)

    3D QD molecule

    3D exciton/biexciton in cubic QD

    3D Nanocrystal

    3D CEO QDs

    3D SET

    3D QD 6-band k.p

    3D strain of GaN nanowire

    3D CBR nanowire (Transmission)

    Input file generator

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